Current price of SQV120N10-3M8_GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, TrenchFET® |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3.8mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 190 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7230 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 250W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262-3 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
MEMS OSC XO 66.6600MHZ H/LV-CMOS
MOSFET N-CH 100V 120A TO262-3
LABEL, 0.75 IN H X 0.25 IN W
PHOTO SEN 100MM PAIR 2M PNP