SQV120N10-3M8_GE3

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Part No :

SQV120N10-3M8_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 100V 120A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 11 - Jul 15 2025
DataSheet
SQV120N10-3M8_GE3 PDF
Availability
383 pieces
Unit Price
$2.97000

Current price of SQV120N10-3M8_GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7230 pF @ 25 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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