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STP6N65M2

STP6N65M2

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Part No :

STP6N65M2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 650V 4A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 10 - Jul 14 2025
DataSheet
STP6N65M2 PDF
Availability
0 pieces
Unit Price
$1.25000

Current price of STP6N65M2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

STP6N65M2 Specifications
Type Description
Series:MDmesh™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.8 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:226 pF @ 100 V
FET Feature:-
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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