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RD3G01BATTL1

RD3G01BATTL1

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Part No :

RD3G01BATTL1

Manufacturer
ROHM Semiconductor
Description
PCH -40V -15A POWER MOSFET - RD3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 10 - Jul 14 2025
DataSheet
RD3G01BATTL1 PDF
Availability
0 pieces
Unit Price
$1.05000

Current price of RD3G01BATTL1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

RD3G01BATTL1 Specifications
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:15A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:39mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:19.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1030 pF @ 20 V
FET Feature:-
Power Dissipation (Max):25W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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  • Delivery date: usually 2 to 7 working days.
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