BSP295H6327XTSA1

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Part No :: BSP295H6327XTSA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 60V 1.8A SOT223-4

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 13 - Jul 17 2025

DataSheet: BSP295H6327XTSA1 PDF

Availability: 6651 pieces

Unit Price: ~~$0.93000~~

Current price of BSP295H6327XTSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSP295H6327XTSA1 Specifications

Type	Description
Series:	SIPMOS®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	300mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id:	1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs:	17 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	368 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	1.8W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-SOT223-4
Package / Case:	TO-261-4, TO-261AA

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