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SCTW90N65G2V

SCTW90N65G2V

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Part No :

SCTW90N65G2V

Manufacturer
STMicroelectronics
Description
SICFET N-CH 650V 90A HIP247
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 28 - Aug 01 2025
DataSheet
SCTW90N65G2V PDF
Availability
551 pieces
Unit Price
$27.71000

Current price of SCTW90N65G2V is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SCTW90N65G2V Specifications
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:25mOhm @ 50A, 18V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:157 nC @ 18 V
Vgs (Max):+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:3300 pF @ 400 V
FET Feature:-
Power Dissipation (Max):390W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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