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Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 18V |
Rds On (Max) @ Id, Vgs: | 25mOhm @ 50A, 18V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 157 nC @ 18 V |
Vgs (Max): | +22V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: | 3300 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 390W (Tc) |
Operating Temperature: | -55°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | HiP247™ |
Package / Case: | TO-247-3 |
SICFET N-CH 650V 90A HIP247
S.S. SQUARE CAM ACTION LATCH
CRYSTAL 40.0000MHZ 12PF SMD
CONN D-SUB SOCKET 16-18AWG CRIMP