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Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 300mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 560 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 18200 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 960W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Supplier Device Package: | SOT-227 |
Package / Case: | SOT-227-4, miniBLOC |
FIXED IND 2.4NH 1A 60 MOHM SMD
MOSFET N-CH 1200V 35A SOT227
ZETA FAMILY 4G(LTE) 3G(UMTS) 2G(
CONN D-SUB HD RCPT 26P R/A SLDR