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IPT029N08N5ATMA1

IPT029N08N5ATMA1

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Part No :

IPT029N08N5ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 52A/169A HSOF-8
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 29 - Aug 02 2025
DataSheet
IPT029N08N5ATMA1 PDF
Availability
1800 pieces
Unit Price
$4.87000

Current price of IPT029N08N5ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPT029N08N5ATMA1 Specifications
Type Description
Series:OptiMOS™ 5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:52A (Ta), 169A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.9mOhm @ 150A, 10V
Vgs(th) (Max) @ Id:3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 40 V
FET Feature:-
Power Dissipation (Max):168W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8
Package / Case:8-PowerSFN
  • Please confirm the specifications of the products when ordering.
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  • If you have special order instructions,please note it on the ordering pages.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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