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CSD19537Q3

CSD19537Q3

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Part No :

CSD19537Q3

Manufacturer
Texas Instruments
Description
MOSFET N-CH 100V 9.7A/50A 8VSON
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
DataSheet
CSD19537Q3 PDF
Availability
3382 pieces
Unit Price
$1.39000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of CSD19537Q3 is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

CSD19537Q3 Specifications
Type Description
Series:NexFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:50A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:14.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1680 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON (3.3x3.3)
Package / Case:8-PowerVDFN
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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