BSC100N10NSFGATMA1

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Part No :: BSC100N10NSFGATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 100V 11.4/90A 8TDSON

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 19 - Jul 23 2025

DataSheet: BSC100N10NSFGATMA1 PDF

Availability: 0 pieces

Unit Price: ~~$2.07000~~

Current price of BSC100N10NSFGATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSC100N10NSFGATMA1 Specifications

Type	Description
Series:	OptiMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	11.4A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:	44 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2900 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	156W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TDSON-8-1
Package / Case:	8-PowerTDFN

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