IAUS200N08S5N023ATMA1

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Part No :: IAUS200N08S5N023ATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 80V 200A HSOG-8

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 20 - Jul 24 2025

DataSheet: IAUS200N08S5N023ATMA1 PDF

Availability: 1790 pieces

Unit Price: ~~$5.55000~~

Current price of IAUS200N08S5N023ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IAUS200N08S5N023ATMA1 Specifications

Type	Description
Series:	Automotive, AEC-Q101, OptiMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	3.8V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:	110 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	7670 pF @ 40 V
FET Feature:	-
Power Dissipation (Max):	200W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-HSOG-8-1
Package / Case:	8-PowerSMD, Gull Wing

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