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SIR570DP-T1-RE3

SIR570DP-T1-RE3

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Part No :

SIR570DP-T1-RE3

Manufacturer
Vishay / Siliconix
Description
N-CHANNEL 150 V (D-S) MOSFET POW
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 20 - Jul 24 2025
DataSheet
SIR570DP-T1-RE3 PDF
Availability
0 pieces
Unit Price
$2.59000

Current price of SIR570DP-T1-RE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIR570DP-T1-RE3 Specifications
Type Description
Series:TrenchFET® Gen V
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 77.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:7.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3740 pF @ 75 V
FET Feature:-
Power Dissipation (Max):6.25W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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