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G3R350MT12J

G3R350MT12J

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Part No :

G3R350MT12J

Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH 11A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 05 - Jul 09 2025
DataSheet
G3R350MT12J PDF
Availability
664 pieces
Unit Price
$5.90000

Current price of G3R350MT12J is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

G3R350MT12J Specifications
Type Description
Series:G3R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:420mOhm @ 4A, 15V
Vgs(th) (Max) @ Id:2.69V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 15 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:334 pF @ 800 V
FET Feature:-
Power Dissipation (Max):75W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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