IPBE65R050CFD7AATMA1

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Part No :: IPBE65R050CFD7AATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 650V 45A TO263-7

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 20 - Jul 24 2025

DataSheet: IPBE65R050CFD7AATMA1 PDF

Availability: 1000 pieces

Unit Price: ~~$13.01000~~

Current price of IPBE65R050CFD7AATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPBE65R050CFD7AATMA1 Specifications

Type	Description
Series:	Automotive, AEC-Q101, CoolMOS™ CFD7A
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	50mOhm @ 24.8A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs:	102 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4975 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	227W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-7-3-10
Package / Case:	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

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