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FDP2D9N12C

FDP2D9N12C

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Part No :

FDP2D9N12C

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
PTNG 120V N-FET TO220
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 25 - Jul 29 2025
DataSheet
FDP2D9N12C PDF
Availability
3200 pieces
Unit Price
$4.82703

Current price of FDP2D9N12C is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

FDP2D9N12C Specifications
Type Description
Series:PowerTrench®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta), 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 686µA
Gate Charge (Qg) (Max) @ Vgs:109 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8894 pF @ 60 V
FET Feature:-
Power Dissipation (Max):2.4W (Ta), 333W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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