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Type | Description |
---|---|
Series: | aMOS™ |
Package: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 399mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13.2 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 646 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 28W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | - |
Package / Case: | TO-262-3 Full Pack, I²Pak |
FUSE GLASS 10A 32VAC 3AB 3AG
XTAL OSC VCXO 133.6500MHZ HCSL
STEP DRILL BIT #14 - DOUBLE-FLUT
MOSFET N-CH 650V 11A TO262F