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Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Cascode SiCJFET) |
Drain to Source Voltage (Vdss): | 750 V |
Current - Continuous Drain (Id) @ 25°C: | 81A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 23mOhm @ 20A, 12V |
Vgs(th) (Max) @ Id: | 6V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: | 37.8 nC @ 15 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1422 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 385W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-4 |
Package / Case: | TO-247-4 |
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