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Type | Description |
---|---|
Series: | eGaN® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 48A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 8mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 7mA |
Gate Charge (Qg) (Max) @ Vgs: | 11 nC @ 5 V |
Vgs (Max): | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 1140 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
CERAMIC RES 20.0000MHZ 30PF T/H
GANFET N-CH 200V 48A DIE
IC GATE XOR 1CH 2-INP 5X2SON
CONN DIP HDR IDC 34P 28AWG VERT