SIHG120N60E-GE3

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Part No :: SIHG120N60E-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 600V 25A TO247AC

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 30 - Aug 03 2025

DataSheet: SIHG120N60E-GE3 PDF

Availability: 446 pieces

Unit Price: ~~$5.70000~~

Current price of SIHG120N60E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIHG120N60E-GE3 Specifications

Type	Description
Series:	E
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	120mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	45 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1562 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	179W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247AC
Package / Case:	TO-247-3

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