TPW4R50ANH,L1Q

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Part No :: TPW4R50ANH,L1Q

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: MOSFET N-CH 100V 92A 8DSOP

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 30 - Aug 03 2025

DataSheet: TPW4R50ANH,L1Q PDF

Availability: 27892 pieces

Unit Price: ~~$2.66000~~

Current price of TPW4R50ANH,L1Q is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

TPW4R50ANH,L1Q Specifications

Type	Description
Series:	U-MOSVIII-H
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	92A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	4.5mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	58 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	5200 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	800mW (Ta), 142W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-DSOP Advance
Package / Case:	8-PowerVDFN

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Delivery date: usually 2 to 7 working days.
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