IPB083N15N5LFATMA1

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Part No :: IPB083N15N5LFATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 150V 105A D2PAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 19 - Jul 23 2025

DataSheet: IPB083N15N5LFATMA1 PDF

Availability: 6 pieces

Unit Price: ~~$5.83000~~

Current price of IPB083N15N5LFATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPB083N15N5LFATMA1 Specifications

Type	Description
Series:	OptiMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	150 V
Current - Continuous Drain (Id) @ 25°C:	105A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	8.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	4.9V @ 134µA
Gate Charge (Qg) (Max) @ Vgs:	45 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	210 pF @ 75 V
FET Feature:	-
Power Dissipation (Max):	179W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263AB)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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