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SCTWA35N65G2V

SCTWA35N65G2V

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Part No :

SCTWA35N65G2V

Manufacturer
STMicroelectronics
Description
TRANS SJT N-CH 650V 45A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 04 - Aug 08 2025
DataSheet
SCTWA35N65G2V PDF
Availability
39 pieces
Unit Price
$12.24000

Current price of SCTWA35N65G2V is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SCTWA35N65G2V Specifications
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V, 20V
Rds On (Max) @ Id, Vgs:72mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 20 V
Vgs (Max):+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds:73000 pF @ 400 V
FET Feature:-
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 Long Leads
Package / Case:TO-247-3
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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