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Type | Description |
---|---|
Series: | CoolMOS™ |
Package: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 20.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 190mOhm @ 13.1A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 114 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2400 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 208W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-3-1 |
Package / Case: | TO-220-3 |
MOSFET N-CH 650V 20.7A TO220-3
SYSTEM BASIS CHIP DCDC 2.2A VCO
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IC TELECOM INTERFACE 640TEPBGA