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R6030JNZ4C13

R6030JNZ4C13

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Part No :

R6030JNZ4C13

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 30A TO247G
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 28 - Aug 01 2025
DataSheet
R6030JNZ4C13 PDF
Availability
600 pieces
Unit Price
$9.99000

Current price of R6030JNZ4C13 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

R6030JNZ4C13 Specifications
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:143mOhm @ 15A, 15V
Vgs(th) (Max) @ Id:7V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs:74 nC @ 15 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 100 V
FET Feature:-
Power Dissipation (Max):370W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247G
Package / Case:TO-247-3
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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