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IPS65R1K0CEAKMA2

IPS65R1K0CEAKMA2

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Part No :

IPS65R1K0CEAKMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 7.2A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 09 - Jul 13 2025
DataSheet
IPS65R1K0CEAKMA2 PDF
Availability
0 pieces
Unit Price
$0.34573

Current price of IPS65R1K0CEAKMA2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPS65R1K0CEAKMA2 Specifications
Type Description
Series:CoolMOS™ CE
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:15.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:328 pF @ 100 V
FET Feature:-
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3-342
Package / Case:TO-251-3 Stub Leads, IPak
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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