IPB120N04S402ATMA1

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Part No :: IPB120N04S402ATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 40V 120A D2PAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jun 30 - Jul 04 2025

DataSheet: IPB120N04S402ATMA1 PDF

Availability: 778 pieces

Unit Price: ~~$2.33000~~

Current price of IPB120N04S402ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPB120N04S402ATMA1 Specifications

Type	Description
Series:	OptiMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:	134 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	10740 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	158W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263AB)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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