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IPB60R099C7ATMA1

IPB60R099C7ATMA1

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Part No :

IPB60R099C7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 22A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 03 - Jul 07 2025
DataSheet
IPB60R099C7ATMA1 PDF
Availability
846 pieces
Unit Price
$5.79000

Current price of IPB60R099C7ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPB60R099C7ATMA1 Specifications
Type Description
Series:CoolMOS™ C7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id:4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1819 pF @ 400 V
FET Feature:-
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
  • Please confirm the specifications of the products when ordering.
  • MOQ means the minimum order quantity required to purchase each parts.
  • If you have special order instructions,please note it on the ordering pages.
  • The Pre-Shipment Inspection (PSI) will be applied.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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