IMZ120R090M1HXKSA1

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Part No :: IMZ120R090M1HXKSA1

Manufacturer: IR (Infineon Technologies)

Description: SICFET N-CH 1.2KV 26A TO247-4

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Aug 03 - Aug 07 2025

DataSheet: IMZ120R090M1HXKSA1 PDF

Availability: 73 pieces

Unit Price: ~~$12.72000~~

Current price of IMZ120R090M1HXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IMZ120R090M1HXKSA1 Specifications

Type	Description
Series:	CoolSiC™
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1.2 kV
Current - Continuous Drain (Id) @ 25°C:	26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	15V, 18V
Rds On (Max) @ Id, Vgs:	117mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id:	5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs:	21 nC @ 18 V
Vgs (Max):	+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds:	707 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	115W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO247-4-1
Package / Case:	TO-247-4

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