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IMZ120R090M1HXKSA1

IMZ120R090M1HXKSA1

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Part No :

IMZ120R090M1HXKSA1

Manufacturer
IR (Infineon Technologies)
Description
SICFET N-CH 1.2KV 26A TO247-4
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 27 - Aug 31 2025
DataSheet
IMZ120R090M1HXKSA1 PDF
Availability
73 pieces
Unit Price
$12.72000

Current price of IMZ120R090M1HXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IMZ120R090M1HXKSA1 Specifications
Type Description
Series:CoolSiC™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1.2 kV
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V, 18V
Rds On (Max) @ Id, Vgs:117mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id:5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 18 V
Vgs (Max):+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds:707 pF @ 800 V
FET Feature:-
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-4-1
Package / Case:TO-247-4
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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