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IRFH8318TRPBF

IRFH8318TRPBF

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Part No :

IRFH8318TRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 27A/120A PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 24 - Jul 28 2025
DataSheet
IRFH8318TRPBF PDF
Availability
0 pieces
Unit Price
$0.80000

Current price of IRFH8318TRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IRFH8318TRPBF Specifications
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:27A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3180 pF @ 10 V
FET Feature:-
Power Dissipation (Max):3.6W (Ta), 59W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PQFN (5x6)
Package / Case:8-PowerTDFN
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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