SIE810DF-T1-E3

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Part No :: SIE810DF-T1-E3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 20V 60A 10POLARPAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 25 - Jul 29 2025

DataSheet: SIE810DF-T1-E3 PDF

Availability: 3000 pieces

Unit Price: ~~$3.61000~~

Current price of SIE810DF-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIE810DF-T1-E3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 10V
Rds On (Max) @ Id, Vgs:	1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	300 nC @ 10 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	13000 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	5.2W (Ta), 125W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	10-PolarPAK® (L)
Package / Case:	10-PolarPAK® (L)

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