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IGT60R070D1ATMA1

IGT60R070D1ATMA1

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Part No :

IGT60R070D1ATMA1

Manufacturer
IR (Infineon Technologies)
Description
GANFET N-CH 600V 31A 8HSOF
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 28 - Aug 01 2025
DataSheet
IGT60R070D1ATMA1 PDF
Availability
3726 pieces
Unit Price
$25.68000

Current price of IGT60R070D1ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IGT60R070D1ATMA1 Specifications
Type Description
Series:CoolGaN™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-10V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 400 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-3
Package / Case:8-PowerSFN
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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