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CSD25304W1015T

CSD25304W1015T

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Part No :

CSD25304W1015T

Manufacturer
Texas Instruments
Description
MOSFET P-CH 20V 3A 6DSBGA
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 15 - Jul 19 2025
DataSheet
CSD25304W1015T PDF
Availability
2396 pieces
Unit Price
$0.64000

Current price of CSD25304W1015T is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

CSD25304W1015T Specifications
Type Description
Series:NexFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:32.5mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.4 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:595 pF @ 10 V
FET Feature:-
Power Dissipation (Max):750mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-DSBGA
Package / Case:6-UFBGA, DSBGA
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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