IPB60R199CPAATMA1

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Part No :: IPB60R199CPAATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 600V 16A D2PAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 29 - Aug 02 2025

DataSheet: IPB60R199CPAATMA1 PDF

Availability: 0 pieces

Unit Price: ~~$2.47625~~

Current price of IPB60R199CPAATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPB60R199CPAATMA1 Specifications

Type	Description
Series:	Automotive, AEC-Q101, CoolMOS™
Package:	Tape & Reel (TR)
Part Status:	Not For New Designs
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs:	43 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1520 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	139W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263AB)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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