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IAUZ18N10S5L420ATMA1

IAUZ18N10S5L420ATMA1

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Part No :

IAUZ18N10S5L420ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 18A TSDSON-8-32
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 29 - Aug 02 2025
DataSheet
IAUZ18N10S5L420ATMA1 PDF
Availability
0 pieces
Unit Price
$0.43715

Current price of IAUZ18N10S5L420ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IAUZ18N10S5L420ATMA1 Specifications
Type Description
Series:OptiMOS™-5
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:42mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:2.2V @ 8µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 50 V
FET Feature:-
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8-32
Package / Case:8-PowerTDFN
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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