AIMW120R045M1XKSA1

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Part No :: AIMW120R045M1XKSA1

Manufacturer: IR (Infineon Technologies)

Description: TRANS SJT N-CH 1200V 52A TO247-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Aug 14 - Aug 18 2025

DataSheet: AIMW120R045M1XKSA1 PDF

Availability: 480 pieces

Unit Price: ~~$22.79000~~

Current price of AIMW120R045M1XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

AIMW120R045M1XKSA1 Specifications

Type	Description
Series:	Automotive, AEC-Q101, CoolSiC™
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id:	5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:	57 nC @ 15 V
Vgs (Max):	+20V, -7V
Input Capacitance (Ciss) (Max) @ Vds:	2130 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	228W (Tc)
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO247-3
Package / Case:	TO-247-3

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