SI4190ADY-T1-GE3

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Part No :: SI4190ADY-T1-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 100V 18.4A 8SO

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 18 - Jul 22 2025

DataSheet: SI4190ADY-T1-GE3 PDF

Availability: 7426 pieces

Unit Price: ~~$1.95000~~

Current price of SI4190ADY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SI4190ADY-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	8.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	67 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1970 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	3W (Ta), 6W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)

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