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Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Rds On (Max) @ Id, Vgs: | 83mOhm @ 25A, 15V |
Vgs(th) (Max) @ Id: | 7V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 120 nC @ 15 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 4500 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 615W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247G |
Package / Case: | TO-247-3 |
EMITTER IR 860NM 100MA RADIAL
MOSFET N-CH 600V 50A TO247G
NANO-SIM CARD CONNECTOR, PIN-EJE
RES KIT 10-2.2M 1/16W 6450PCS