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Type | Description |
---|---|
Series: | aMOS5™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 600mOhm @ 2.1A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11.5 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 608 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 23W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262F |
Package / Case: | TO-262-3 Full Pack, I²Pak |
FIXED IND 3.3UH 1.6A 173 MOHM
MOSFET N-CH 600V 8A TO262F
CONN HEADER R/A 2POS 2.5MM
IC DRAM 128MBIT PARALLEL 66TSOP