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SI2366DS-T1-GE3

SI2366DS-T1-GE3

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Part No :

SI2366DS-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 5.8A SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 29 - Aug 02 2025
DataSheet
SI2366DS-T1-GE3 PDF
Availability
0 pieces
Unit Price
$0.48000

Current price of SI2366DS-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SI2366DS-T1-GE3 Specifications
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:36mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:335 pF @ 15 V
FET Feature:-
Power Dissipation (Max):1.25W (Ta), 2.1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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