BSM180C12P2E202

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Part No :: BSM180C12P2E202

Manufacturer: ROHM Semiconductor

Description: SICFET N-CH 1200V 204A MODULE

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 27 - Jul 31 2025

DataSheet: BSM180C12P2E202 PDF

Availability: 4 pieces

Unit Price: ~~$600.00000~~

Current price of BSM180C12P2E202 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSM180C12P2E202 Specifications

Type	Description
Series:	-
Package:	Tray
Part Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	204A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	-
Vgs(th) (Max) @ Id:	4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds:	20000 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	1360W (Tc)
Operating Temperature:	175°C (TJ)
Mounting Type:	Chassis Mount
Supplier Device Package:	Module
Package / Case:	Module

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