BSC120N03LSGATMA1

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Part No :: BSC120N03LSGATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 30V 12A/39A TDSON

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Aug 03 - Aug 07 2025

DataSheet: BSC120N03LSGATMA1 PDF

Availability: 32922 pieces

Unit Price: ~~$0.73000~~

Current price of BSC120N03LSGATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSC120N03LSGATMA1 Specifications

Type	Description
Series:	OptiMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	12mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1200 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 28W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TDSON-8-5
Package / Case:	8-PowerTDFN

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