TPN22006NH,LQ

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Part No :: TPN22006NH,LQ

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: MOSFET N-CH 60V 9A 8TSON

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Aug 08 - Aug 12 2025

DataSheet: TPN22006NH,LQ PDF

Availability: 993 pieces

Unit Price: ~~$0.91000~~

Current price of TPN22006NH,LQ is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

TPN22006NH,LQ Specifications

Type	Description
Series:	U-MOSVIII-H
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	6.5V, 10V
Rds On (Max) @ Id, Vgs:	22mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	12 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	710 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	700mW (Ta), 18W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-TSON Advance (3.3x3.3)
Package / Case:	8-PowerVDFN

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