IPD80R2K8CEATMA1

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Part No :: IPD80R2K8CEATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 800V 1.9A TO252-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 26 - Jul 30 2025

DataSheet: IPD80R2K8CEATMA1 PDF

Availability: 0 pieces

Unit Price: ~~$1.00000~~

Current price of IPD80R2K8CEATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPD80R2K8CEATMA1 Specifications

Type	Description
Series:	CoolMOS™ CE
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	800 V
Current - Continuous Drain (Id) @ 25°C:	1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	2.8Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:	3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:	12 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	290 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	42W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO252-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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