FQB11P06TM

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Part No :: FQB11P06TM

Manufacturer: Sanyo Semiconductor/ON Semiconductor

Description: MOSFET P-CH 60V 11.4A D2PAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 26 - Jul 30 2025

DataSheet: FQB11P06TM PDF

Availability: 319 pieces

Unit Price: ~~$1.05000~~

Current price of FQB11P06TM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

FQB11P06TM Specifications

Type	Description
Series:	QFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	175mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	17 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	550 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	3.13W (Ta), 53W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263AB)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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