IMBG120R220M1HXTMA1

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Part No :: IMBG120R220M1HXTMA1

Manufacturer: IR (Infineon Technologies)

Description: TRANS SJT N-CH 1.2KV 13A TO263

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 27 - Jul 31 2025

DataSheet: IMBG120R220M1HXTMA1 PDF

Availability: 968 pieces

Unit Price: ~~$10.51000~~

Current price of IMBG120R220M1HXTMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IMBG120R220M1HXTMA1 Specifications

Type	Description
Series:	CoolSiC™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):	1.2 kV
Current - Continuous Drain (Id) @ 25°C:	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	294mOhm @ 4A, 18V
Vgs(th) (Max) @ Id:	5.7V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs:	9.4 nC @ 18 V
Vgs (Max):	+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds:	312 pF @ 800 V
FET Feature:	Standard
Power Dissipation (Max):	83W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-7-12
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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