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IPAW60R190CEXKSA1

IPAW60R190CEXKSA1

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Part No :

IPAW60R190CEXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 26.7A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 03 - Aug 07 2025
DataSheet
IPAW60R190CEXKSA1 PDF
Availability
659 pieces
Unit Price
$2.10000

Current price of IPAW60R190CEXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPAW60R190CEXKSA1 Specifications
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:26.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):34W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
  • Please confirm the specifications of the products when ordering.
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  • If you have special order instructions,please note it on the ordering pages.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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