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IPP147N12N3GXKSA1

IPP147N12N3GXKSA1

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Part No :

IPP147N12N3GXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 120V 56A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 18 - Jul 22 2025
DataSheet
IPP147N12N3GXKSA1 PDF
Availability
7669 pieces
Unit Price
$1.74000

Current price of IPP147N12N3GXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPP147N12N3GXKSA1 Specifications
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:56A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14.7mOhm @ 56A, 10V
Vgs(th) (Max) @ Id:4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3220 pF @ 60 V
FET Feature:-
Power Dissipation (Max):107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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