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NTMYS2D2N06CLTWG

NTMYS2D2N06CLTWG

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Part No :

NTMYS2D2N06CLTWG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 31A/185A LFPAK4
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 27 - Jul 31 2025
DataSheet
NTMYS2D2N06CLTWG PDF
Availability
12000 pieces
Unit Price
$1.11300

Current price of NTMYS2D2N06CLTWG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

NTMYS2D2N06CLTWG Specifications
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:31A (Ta), 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:69 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4850 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.9W (Ta), 134W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK4 (5x6)
Package / Case:SOT-1023, 4-LFPAK
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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