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BSB104N08NP3GXUSA1

BSB104N08NP3GXUSA1

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Part No :

BSB104N08NP3GXUSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 13A/50A 2WDSON
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 04 - Jul 08 2025
DataSheet
BSB104N08NP3GXUSA1 PDF
Availability
0 pieces
Unit Price
$0.78768

Current price of BSB104N08NP3GXUSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSB104N08NP3GXUSA1 Specifications
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2100 pF @ 40 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MG-WDSON-2, CanPAK M™
Package / Case:3-WDSON
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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