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SIUD402ED-T1-GE3

SIUD402ED-T1-GE3

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Part No :

SIUD402ED-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 1A PPAK 0806
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 22 - Jul 26 2025
DataSheet
SIUD402ED-T1-GE3 PDF
Availability
0 pieces
Unit Price
$0.08296

Current price of SIUD402ED-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIUD402ED-T1-GE3 Specifications
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:730mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.2 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:16 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.25W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 0806
Package / Case:PowerPAK® 0806
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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