SIHU6N65E-GE3

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Part No :: SIHU6N65E-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 650V 7A IPAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 11 - Jul 15 2025

DataSheet: SIHU6N65E-GE3 PDF

Availability: 0 pieces

Unit Price: ~~$0.81675~~

Current price of SIHU6N65E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIHU6N65E-GE3 Specifications

Type	Description
Series:	-
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	48 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	820 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	78W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	IPAK (TO-251)
Package / Case:	TO-251-3 Long Leads, IPak, TO-251AB

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